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Modeling and Characterization of RF and Microwave Power FETs

£20.99

Product description

362pp, including index. Contents clean, tightly bound and crisp. Laminated boards have a little edge wear and owner's name in ink to both boards. Block clean, binding tight.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Item details

Author(s):
Aaen, Peter; Pla, Jaime A.; Wood, John
Condition:
Used: very good
Dimensions:
25 x 18 cms
Edition:
First edition, 2007
Format:
Hardback
ISBN-10:
0521870666
ISBN-13:
9780521870665
Number of pages:
362
Publisher:
Cambridge University Press

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About this item

362pp, including index. Contents clean, tightly bound and crisp. Laminated boards have a little edge wear and owner's name in ink to both boards. Block clean, binding tight.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Author(s):
Aaen, Peter; Pla, Jaime A.; Wood, John
Condition:
Used: very good
Dimensions:
25 x 18 cms
Edition:
First edition, 2007
Format:
Hardback
ISBN-10:
0521870666
ISBN-13:
9780521870665
Number of pages:
362
Publisher:
Cambridge University Press

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